mahsulotlar

Mahsulotlar

Flanesli tugatish

Flanesli terminallar zanjirning oxiriga o'rnatiladi, ular zanjirda uzatiladigan signallarni yutadi va signalning aks etishiga to'sqinlik qiladi, shu bilan zanjir tizimining uzatish sifatiga ta'sir qiladi. Flanesli terminal bitta simli terminal rezistorini flanjlar va yamoqlar bilan payvandlash orqali yig'iladi. Flanj o'lchami odatda o'rnatish teshiklari va terminal qarshilik o'lchamlarining kombinatsiyasi asosida ishlab chiqiladi. Mijozning foydalanish talablariga muvofiq ham moslashtirish mumkin.


  • Nominal quvvat:5-1500 Vt
  • Substrat materiallari:BeO, AlN, Al2O3
  • Nominal qarshilik qiymati:50Ω
  • Qarshilik bardoshliligi:±5%, ±2%, ±1%
  • Harorat koeffitsienti:<150ppm/℃
  • Ishlash harorati:-55~+150℃
  • Flanj qoplamasi:ixtiyoriy nikel yoki kumush qoplama
  • ROHS standarti:Mos keladi
  • Qo'rg'oshin uzunligi:Ma'lumotlar varag'ida ko'rsatilganidek, L
  • Maxsus dizayn so'rov bo'yicha mavjud.:
  • Mahsulot tafsiloti

    Mahsulot teglari

    Flanesli tugatish

    Flanesli tugatish
    Asosiy texnik xususiyatlar:

    Nominal quvvat: 5-1500 Vt;
    Substrat materiallari: BeO, AlN, Al2O3
    Nominal qarshilik qiymati: 50Ω
    Qarshilik bardoshliligi: ± 5%, ± 2%, ± 1%
    Harorat koeffitsienti: <150ppm/℃
    Ishlash harorati: -55~+150℃
    Flanes qoplamasi: ixtiyoriy nikel yoki kumush qoplama
    ROHS standarti: mos keladi
    Amaldagi standart: Q/RFTYTR001-2022
    Qo'rg'oshin uzunligi: ma'lumotlar varag'ida ko'rsatilganidek L
    (mijoz talablariga muvofiq sozlanishi mumkin)

    zxczxc1
    Quvvat
    (V)
    Chastota
    Diapazon
    O'lcham (birlik: mm) SubstratMateriallar Konfiguratsiya Tafsilotli ro'yxat
    (PDF)
    A B C D E H G W L J Φ
    5W 6 gigagertsli 13.0 4.0 9.0 4.0 0.8 1.8 2.8 1.0 4.0 / 2.1 Al2O3  1-rasm   RFT50A-05TM1304
    11.0 4.0 7.6 4.0 0.8 1.8 2.8 1.0 4.0 / 2.2 Al2O3  1-rasm   RFT50A-05TM1104
    9.0 4.0 7.0 4.0 0.8 1.8 2.8 1.0 4.0 / 2.1 Al2O3  2-rasm   RFT50A-05TM0904(R,L,I)
    10 Vt 4 gigagertsli 7.7 5.0 5.1 2.5 1.5 2.5 3.5 1.0 3.0 / 3.1 BeO 2-rasm   RFT50-10TM7750((R,L))
    6 gigagertsli 13.0 4.0 9.0 4.0 0.8 1.8 2.8 1.0 4.0 / 2.1 Al2O3  1-rasm   RFT50A-10TM1304
    AlN 1-rasm   RFT50N-10TJ1304
    11.0 4.0 7.6 4.0 0.8 1.8 2.8 1.0 4.0 / 2.2 Al2O3  1-rasm   RFT50A-10TM1104
    AlN 1-rasm   RFT50N-10TJ1104
    9.0 4.0 7.0 4.0 0.8 1.8 2.8 1.0 4.0 / 2.1 Al2O3 2-rasm   RFT50A-10TM0904(R,L,I)
      AlN 2-rasm   RFT50N-10TJ0904(R,L,I)
    8 gigagertsli 13.0 4.0 9.0 4.0 0.8 1.8 2.8 1.0 4.0 / 2.1 BeO 1-rasm   RFT50-10TM1304
    11.0 4.0 7.6 4.0 0.8 1.8 2.8 1.0 4.0 / 2.2 BeO 1-rasm   RFT50-10TM1104
    9.0 4.0 7.0 4.0 0.8 1.8 2.8 1.0 4.0 / 2.1 BeO 2-rasm   RFT50-10TM0904(R,L,I)
    18 gigagertsli 7.7 5.0 5.1 2.5 1.5 2.5 3.5 1.0 3.0 / 3.1 BeO 2-rasm   RFT50-10TM7750I
    20 Vt 4 gigagertsli 7.7 5.0 5.1 2.5 1.5 2.5 3.5 1.0 3.0 / 3.1 BeO 2-rasm   RFT50-20TM7750((R,L))
    6 gigagertsli 13.0 4.0 9.0 4.0 0.8 1.8 2.8 1.0 4.0 / 2.1 AlN 1-rasm   RFT50N-20TJ1304
    11.0 4.0 7.6 4.0 0.8 1.8 2.8 1.0 4.0 / 2.2 AlN 1-rasm   RFT50N-20TJ1104
    9.0 4.0 7.0 4.0 0.8 1.8 2.8 1.0 4.0 / 2.1 AlN 2-rasm   RFT50N-20TJ0904(R,L,I)
    8 gigagertsli 13.0 4.0 9.0 4.0 0.8 1.8 2.8 1.0 4.0 / 2.1 BeO 1-rasm   RFT50-20TM1304
    11.0 4.0 7.6 4.0 0.8 1.8 2.8 1.0 4.0 / 2.2 BeO 1-rasm   RFT50-20TM1104
    9.0 4.0 7.0 4.0 0.8 1.8 2.8 1.0 4.0 / 2.1 BeO 2-rasm   RFT50-10TM0904(R,L,I)
    18 gigagertsli 7.7 5.0 5.1 2.5 1.5 2.5 3.5 1.0 3.0 / 3.1 BeO 2-rasm   RFT50-10TM7750I
    30 Vt 6 gigagertsli 16.0 6.0 13.0 6.0 1.0 2.0 3.0 1.0 5.0 / 2.1 AlN 1-rasm   RFT50N-30TJ1606
    BeO 1-rasm   RFT50-30TM1606
    20.0 6.0 14.0 6.0 1.5 2.5 3.0 1.0 5.0 / 3.2 AlN 1-rasm   RFT50N-30TJ2006
    BeO 1-rasm   RFT50-30TM2006
    13.0 6.0 10.0 6.0 1.5 2.5 3.0 1.0 5.0 / 3.2 AlN 2-rasm   RFT50N-30TJ1306(R,L,I)
    3.0 BeO 2-rasm   RFT50-30TM1306(R,L,I)
    60 Vt 6 gigagertsli 16.0 6.0 13.0 6.0 1.0 2.0 3.0 1.0 5.0 / 2.1 AlN 1-rasm   RFT50N-60TJ1606
    3.2 BeO 1-rasm   RFT50-60TM1606
    20.0 6.0 14.0 6.0 1.5 2.5 3.0 1.0 5.0 / 3.2 AlN 1-rasm   RFT50N-60TJ2006
    3.2 BeO 1-rasm   RFT50-60TM2006
    13.0 6.0 10.0 6.0 1.5 2.5 3.0 1.0 5.0 / 3.2 AlN 2-rasm   RFT50N-60TJ1306(R,L,I)
    3.2 BeO 2-rasm   RFT50-60TM1306(R,L,I)
    mēngčičnīīFIG3,4,5
    Quvvat
    (V)
    Chastota
    Diapazon
    Olchamlari (birlik: mm) Substrat
    Materiallar
    Konfiguratsiya Ma'lumotlar varag'i (PDF)
    A B C D E H G W L J Φ
    100 Vt 3 gigagertsli 24.8 9.5 18.4 9.5 2.9 4.8 5.5 1.4 6.0 / 3.1 BeO 1-rasm   RFT50-100TM2595
    4 gigagertsli 16.0 6.0 13.0 9.0 1.0 2.0 2.5 1.0 6.0 / 2.1 BeO 2-rasm   RFT50N-100TM1606
    20.0 6.0 14.0 9.0 1.5 2.5 3.0 1.0 5.0 / 3.2 BeO 1-rasm   RFT50N-100TJ2006
    24.8 6.0 18.4 6.0 2.8 3.8 4.6 1.0 5.0 / 3.2 BeO 1-rasm   RFT50-100TM2506
    16.0 10.0 13.0 10.0 1.5 2.6 3.3 1.4 6.0 / 3.2 BeO 4-rasm   RFT50-100TJ1610(R,L,I)
    23.0 10.0 17.0 10.0 1.5 3.0 3.8 1.4 6.0 / 3.2 BeO 1-rasm   RFT50-100TJ2310
    24.8 10.0 18.4 10.0 3.0 4.6 5.5 1.4 6.0 / 3.5 BeO 1-rasm   RFT50-100TJ2510
    5 gigagertsli 13.0 6.35 10.0 6.35 1.5 2.5 3.2 1.0 5.0 / 3.2 BeO 2-rasm   RFT50-100TJ1363(R,L,I)
    16.6 6.35 12.0 6.35 1.5 2.5 3.5 1.0 5.0 / 2.5 BeO 1-rasm   RFT50-100TM1663
    6 gigagertsli 16.0 6.0 13.0 8.9 1.0 2.0 2.5 1.0 5.0 / 2.1 AlN 1-rasm   RFT50N-100TJ1606B
    20.0 6.0 14.0 8.9 1.5 2.5 3.0 1.0 5.0 / 3.2 AlN 1-rasm   RFT50N-100TJ2006B
    8 gigagertsli 20.0 6.0 14.0 8.9 1.5 3.0 3.5 1.0 5.0 / 3.2 AlN 1-rasm   RFT50N-100TJ2006C
    150 Vt 3 gigagertsli 16.0 10.0 13.0 10.0 1.5 2.6 3.3 1.4 6.0 / 3.2 BeO 4-rasm   RFT50-150TM1610(R,L,I)
    22.0 9.5 14.0 6.35 1.5 2.6 3.0 1.4 5.0 / 4.0 AIN 1-rasm   RFT50N-150TJ2295
    24.8 9.5 18.4 9.5 2.9 4.8 5.5 1.4 6.0 / 3.1 BeO 1-rasm   RFT50-150TM2595
    24.8 10.0 18.4 10.0 3.0 4.6 5.5 1.4 6.0 / 3.5 BeO 1-rasm   RFT50-150TM2510
    4 gigagertsli 16.0 10.0 13.0 10.0 1.5 2.6 3.3 1.4 6.0 / 3.2 BeO 4-rasm   RFT50-150TJ1610(R,L,I)
    23.0 10.0 17.0 10.0 1.5 3.0 3.8 1.4 6.0 / 3.2 BeO 3-rasm   RFT50-150TJ2310
    24.8 10.0 18.4 10.0 3.0 4.6 5.5 1.4 6.0 / 3.5 BeO 1-rasm   RFT50-150TJ2510
    200 Vt 3 gigagertsli 24.8 9.5 18.4 9.5 2.9 4.8 5.5 1.4 6.0 / 3.1 BeO 1-rasm   RFT50-200TM2595
    24.8 10.0 18.4 10.0 3.0 4.6 5.5 1.4 6.0 / 3.5 BeO 1-rasm   RFT50-200TM2510
    4 gigagertsli 16.0 10.0 13.0 10.0 1.5 2.6 3.3 1.4 6.0 / 3.2 BeO 2-rasm   RFT50-200TM1610(R,L,I)
    23.0 10.0 17.0 10.0 1.5 3.0 3.8 1.4 6.0 / 3.2 BeO 3-rasm   RFT50-200TJ2310
    24.8 10.0 18.4 10.0 3.0 4.6 5.5 1.4 6.0 / 3.5 BeO 1-rasm   RFT50-150TJ2510
    10 gigagertsli 32.0 12.7 22.0 12.7 3.0 5.0 6.0 2.4 6.0 / 4.0 BeO 1-rasm   RFT50-200TM3213B
    250 Vt 3 gigagertsli 23.0 10.0 17.0 12.0 1.5 3.0 3.8 1.4 6.0 / 3.2 BeO 3-rasm   RFT50-250TM2310
    24.8 10.0 18.4 12.0 3.0 4.6 5.5 1.4 6.0 / 3.5 BeO 1-rasm   RFT50-250TM2510
    27.0 10.0 21.0 12.0 2.5 4.0 5.5 1.4 6.0 / 3.2 BeO 1-rasm   RFT50-250TM2710
    10 gigagertsli 32.0 12.7 22.0 12.7 3.0 5.0 6.0 2.4 6.0 / 4.0 BeO 1-rasm   RFT50-250TM3213B
    300 Vt 3 gigagertsli 23.0 10.0 17.0 12.0 1.5 3.0 3.8 1.4 6.0 / 3.2 BeO 1-rasm   RFT50-300TM2310
    24.8 10.0 18.4 12.0 3.0 4.6 5.5 1.4 6.0 / 3.5 BeO 1-rasm   RFT50-300TM2510
    27.0 10.0 21.0 12.0 2.5 4.0 5.5 1.4 6.0 / 3.2 BeO 1-rasm   RFT50-300TM2710
    10 gigagertsli 32.0 12.7 22.0 12.7 3.0 5.0 6.0 2.4 6.0 / 4.0 BeO 1-rasm   RFT50-300TM3213B
    400 Vt 2 gigagertsli 32.0 12.7 22.0 12.7 3.0 5.0 6.0 2.4 6.0 / 4.0 BeO 1-rasm   RFT50-400TM3213
    500 Vt 2 gigagertsli 32.0 12.7 22.0 12.7 3.0 5.0 6.0 2.4 6.0 / 4.0 BeO 1-rasm   RFT50-500TM3213
    800 Vt 1 gigagertsli 48.0 26.0 40.0 26.0 3.0 6.2 6.9 6.0 7.0 12.7 4.2 BeO 5-rasm   RFT50-800TM4826
    1000 Vt 1 gigagertsli 48.0 26.0 40.0 26.0 3.0 6.2 6.9 6.0 7.0 12.7 4.2 BeO 5-rasm   RFT50-1000TM4826
    1500 Vt 0,8 gigagertsli 50.0 78.0 40.0 26.0 5.0 8.2 9.0 6.0 7.0 15.0 4.2 BeO 5-rasm   RFT50-1500TM5078

    Umumiy ma'lumot

    Flanj odatda mis bilan qoplangan nikel yoki kumush bilan ishlov berishdan tayyorlanadi. Qarshilik substrati odatda quvvat talablari va issiqlik tarqalish sharoitlariga muvofiq berilliy oksidi, alyuminiy nitridi va alyuminiy oksidi bosmasidan tayyorlanadi.

    Flanesli terminal, qo'rg'oshinli terminal singari, asosan zanjirning oxiriga uzatiladigan signal to'lqinlarini yutish, signal akslanishining zanjirga ta'sir qilishining oldini olish va zanjir tizimining uzatish sifatini ta'minlash uchun ishlatiladi.

    Flanesli terminal, gardish va gardishdagi o'rnatish teshiklari tufayli yamoq rezistorlariga nisbatan oson o'rnatish xususiyatiga ega.


  • Oldingi:
  • Keyingisi: